• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 7734
  • IPSA70R750P7SAKMA1
    MOSFET COOLMOS 700V TO251-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P7
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: PG-TO251-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 70µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V
    • Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 34.7W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±16V
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  • IRF5805
    MOSFET P-CH 30V 3.8A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: Micro6™(TSOP-6)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 511pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SPB100N03S2-03 G
    MOSFET N-CH 30V 100A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPP80N06S3L-08
    MOSFET N-CH 55V 80A TO-220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 55µA
    • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 105W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±16V
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  • PTFA190451FV4R250XTMA1
    IC FET RF LDMOS 45W H-37265-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Package / Case: 2-Flatpack, Fin Leads, Flanged
    • Supplier Device Package: H-37265-2
    • Frequency: 1.96GHz
    • Voltage - Rated: 65V
    • Current - Test: 450mA
    • Power - Output: 11W
    • Transistor Type: LDMOS
    • Gain: 17.5dB
    • Voltage - Test: 28V
    • Current Rating (Amps): 10µA
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  • IRF3805PBF
    MOSFET N-CH 55V 75A TO-220AB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • BUZ73HXKSA1
    MOSFET N-CH 200V 7A TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL3303D1STRL
    MOSFET N-CH 30V 38A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 68W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • SPN02N60S5
    MOSFET N-CH 600V 0.4A SOT-223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: PG-SOT223-4
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 80µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL1404ZSPBF
    MOSFET N-CH 40V 75A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IPB80N04S403ATMA1
    MOSFET N-CH 40V 80A TO263-3-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 53µA
    • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7494TR
    MOSFET N-CH 150V 5.2A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRF6720S2TRPBF
    MOSFET N-CH 30V 11A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRLZ44NLPBF
    MOSFET N-CH 55V 47A TO-262
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • Vgs (Max): ±16V
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  • BSC031N06NS3GATMA1
    MOSFET N-CH 60V 100A TDSON-8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: PG-TDSON-8-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 93µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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