Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 6-TSOP

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 16
  • IRF5810TR
    MOSFET 2P-CH 20V 2.9A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5851TRPBF
    MOSFET N/P-CH 20V 2.7A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5850
    MOSFET 2P-CH 20V 2.2A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.2A
    • Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRLTS2242TRPBF
    MOSFET P-CH 20V 6.9A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRLTS6342TRPBF
    MOSFET N-CH 30V 8.3A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5852TR
    MOSFET 2N-CH 20V 2.7A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5850TRPBF
    MOSFET 2P-CH 20V 2.2A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.2A
    • Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5852TRPBF
    MOSFET 2N-CH 20V 2.7A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5852
    MOSFET 2N-CH 20V 2.7A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5810
    MOSFET 2P-CH 20V 2.9A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5851TR
    MOSFET N/P-CH 20V 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5851
    MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF5810TRPBF
    MOSFET 2P-CH 20V 2.9A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
    • Power - Max: 960mW
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRFTS9342TRPBF
    MOSFET P-CH 30V 5.8A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRFTS8342TRPBF
    MOSFET N-CH 30V 8.2A 6TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100