Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies D2PAK-7

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
  • AUIRFS8407-7P
    MOSFET N-CH 40V 240A AUTO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 231W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS7434TRL7PP
    MOSFET N-CH 40V 240A D2PAK-7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 245W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRF135SA204
    MOSFET N-CH 135V 160A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Variant
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 135V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 96A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11690pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRFS3004-7P
    MOSFET N-CH 40V 240A D2PAK-7P
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 380W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS4321TRL7PP
    MOSFET N-CH 150V 86A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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