Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies DirectFET™ Isometric MF

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • IRF40DM229
    MOSFET N-CH 40V 159A ISOMETRICMF
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric MF
    • Supplier Device Package: DirectFET™ Isometric MF
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5317pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRF7483MTRPBF
    MOSFET N-CH 40V 135A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric MF
    • Supplier Device Package: DirectFET™ Isometric MF
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3913pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 74W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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