Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies AG-EASY1BM

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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Found: 1
  • FF45MR12W1M1PB11BPSA1
    LOW POWER EASY AG-EASY1BM-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: AG-EASY1BM
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
    • Vgs(th) (Max) @ Id: 5.55V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1.84nF @ 800V
    • Power - Max: 20mW (Tc)
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