Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies D²PAK (TO-263AB)

• Manufacturer: Infineon Technologies
• Series: HEXFET®, StrongIRFET™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 375W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 2V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 94W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 188W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 300W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 81.1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1355pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 52W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: Automotive, AEC-Q101, CoolMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 277.8W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™ P7
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
• Vgs(th) (Max) @ Id: 4V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 72W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
• Vgs(th) (Max) @ Id: 4V @ 95µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 20V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 167W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™ C7
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 63W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 68W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 151W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 150W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 3.5mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id: 2V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5203pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 107W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 200W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V