-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPB18P06P | MOSFET P-CH 60V 18.7A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 81.1W (Ta) | 60V | 18.7A (Ta) | 130mOhm @ 13.2A, 10V | 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | ±20V | SIPMOS® |
| IPB65R110CFDATMA1 | MOSFET N-CH 650V 31.2A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 277.8W (Tc) | 650V | 31.2A (Tc) | 110mOhm @ 12.7A, 10V | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | CoolMOS™ |
| IRFS7537TRLPBF | MOSFET N CH 60V 173A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 60V | 173A (Tc) | 3.3mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRFS7762TRLPBF | MOSFET N-CH 75V 104A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 75V | 85A (Tc) | 6.7mOhm @ 51A, 10V | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRFS7534TRLPBF | MOSFET N CH 60V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 294W (Tc) | 60V | 195A (Tc) | 2.4mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB60R099P7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 117W (Tc) | 650V | 31A (Tc) | 99mOhm @ 10.5A, 10V | 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | ±20V | CoolMOS™ P7 |
| IPB024N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 80V | 120A (Tc) | 2.4mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 154µA | 123nC @ 10V | 8970pF @ 40V | ±20V | OptiMOS™ |
| IPB65R125C7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 101W (Tc) | 650V | 18A (Ta) | 125mOhm @ 8.9A, 10V | 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | ±20V | CoolMOS™ C7 |
| IRF135S203 | MOSFET NCH 135V 129A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 441W (Tc) | 135V | 129A (Tc) | 8.4mOhm @ 77A, 10V | 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | ±20V | HEXFET®, StrongIRFET™ |
| IPB093N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 47W (Tc) | 40V | 50A (Tc) | 9.3mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 16µA | 28nC @ 10V | 2100pF @ 20V | ±20V | OptiMOS™ |
| IPB60R190P6ATMA1 | MOSFET N-CH 600V TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 151W (Tc) | 600V | 20.2A (Tc) | 190mOhm @ 7.6A, 10V | 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | ±20V | CoolMOS™ P6 |
| IPB65R099C6ATMA1 | MOSFET N-CH 650V 38A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 278W (Tc) | 650V | 38A (Tc) | 99mOhm @ 12.8A, 10V | 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | ±20V | CoolMOS™ |
| IRFS7530TRLPBF | MOSFET N CH 60V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 60V | 195A (Tc) | 2mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB26CNE8N G | MOSFET N-CH 85V 35A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 85V | 35A (Tc) | 26mOhm @ 35A, 10V | 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 40V | ±20V | OptiMOS™ |
| AUIRFS4127 | MOSFET NCH 200V 72A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 200V | 72A (Tc) | 22mOhm @ 44A, 10V | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | Automotive, AEC-Q101, HEXFET® |
- 10
- 15
- 50
- 100