• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 184
  • SPB18P06P
    MOSFET P-CH 60V 18.7A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 81.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB65R110CFDATMA1
    MOSFET N-CH 650V 31.2A TO263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
    • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 277.8W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS7537TRLPBF
    MOSFET N CH 60V 173A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRFS7762TRLPBF
    MOSFET N-CH 75V 104A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 140W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRFS7534TRLPBF
    MOSFET N CH 60V 195A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 294W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IPB60R099P7ATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P7
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
    • Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 530µA
    • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 117W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB024N08N5ATMA1
    MOSFET N-CH 80V TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 154µA
    • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 214W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IPB65R125C7ATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ C7
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 440µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 101W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF135S203
    MOSFET NCH 135V 129A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 135V
    • Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 441W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB093N04LGATMA1
    MOSFET N-CH 40V 50A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 16µA
    • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 47W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPB60R190P6ATMA1
    MOSFET N-CH 600V TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P6
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 630µA
    • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 151W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB65R099C6ATMA1
    MOSFET N-CH 650V 38A TO263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 278W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS7530TRLPBF
    MOSFET N CH 60V 195A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IPB26CNE8N G
    MOSFET N-CH 85V 35A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 39µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 71W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRFS4127
    MOSFET NCH 200V 72A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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