-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS7730TRLPBF | MOSFET N-CH 75V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 75V | 195A (Tc) | 2.6mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB039N04LGATMA1 | MOSFET N-CH 40V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 3.9mOhm @ 80A, 10V | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6100pF @ 25V | ±20V | OptiMOS™ |
| IPB120N04S401ATMA1 | MOSFET N-CH 40V 120A TO263-3-2 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 188W (Tc) | 40V | 120A (Tc) | 1.5mOhm @ 100A, 10V | 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | ±20V | OptiMOS™ |
| IPB038N12N3GATMA1 | MOSFET N-CH 120V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 120V | 120A (Tc) | 3.8mOhm @ 100A, 10V | 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | ±20V | OptiMOS™ |
| SPB18P06PGATMA1 | MOSFET P-CH 60V 18.7A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 81.1W (Ta) | 60V | 18.7A (Ta) | 130mOhm @ 13.2A, 10V | 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | ±20V | SIPMOS® |
| IPB13N03LB G | MOSFET N-CH 30V 30A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 52W (Tc) | 30V | 30A (Tc) | 12.5mOhm @ 30A, 10V | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1355pF @ 15V | ±20V | OptiMOS™ |
| IPB65R110CFDAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 277.8W (Tc) | 650V | 31.2A (Tc) | 110mOhm @ 12.7A, 10V | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
| IPB60R180P7ATMA1 | MOSFET TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 72W (Tc) | 600V | 18A (Tc) | 180mOhm @ 5.6A, 10V | 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | ±20V | CoolMOS™ P7 |
| IPB023N04NGATMA1 | MOSFET N-CH 40V 90A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 40V | 90A (Tc) | 2.3mOhm @ 90A, 10V | 10V | 4V @ 95µA | 120nC @ 10V | 10000pF @ 20V | ±20V | OptiMOS™ |
| IPB65R225C7ATMA1 | MOSFET N-CH 650V 11A TO-263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 63W (Tc) | 650V | 11A (Tc) | 225mOhm @ 4.8A, 10V | 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | ±20V | CoolMOS™ C7 |
| IPB055N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 50A (Tc) | 5.5mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 3200pF @ 15V | ±20V | OptiMOS™ |
| IPB65R190C6ATMA1 | MOSFET N-CH 650V 20.2A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 151W (Tc) | 650V | 20.2A (Tc) | 190mOhm @ 7.3A, 10V | 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | ±20V | CoolMOS™ |
| IPB03N03LB | MOSFET N-CH 30V 80A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 30V | 80A (Tc) | 2.8mOhm @ 55A, 10V | 4.5V, 10V | 2V @ 100µA | 59nC @ 5V | 7624pF @ 15V | ±20V | OptiMOS™ |
| IPB04N03LB | MOSFET N-CH 30V 80A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 107W (Tc) | 30V | 80A (Tc) | 3.5mOhm @ 55A, 10V | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | OptiMOS™ |
| IRFS4410TRLPBF | MOSFET N-CH 100V 88A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 100V | 88A (Tc) | 10mOhm @ 58A, 10V | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | HEXFET® |
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