• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
BLC10G18XS-320AVTY RF TRANSISTOR 320W 6LD SOT1258-4 Ampleon USA Inc. SOT-1258-7 1.805GHz ~ 1.88GHz LDMOS SOT-1258-7 BLC
DMC2025UFDBQ-7 MOSFET BVDSS: 8V~24V U-DFN2020-6 Diodes Incorporated 6-UDFN Exposed Pad 700mW (Ta) Surface Mount -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) N and P-Channel Complementary 20V 6A (Ta), 3.5A (Ta) Standard 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V 1V @ 250µA, 1.4V @ 250µA 12.3nC @ 10V, 15nC @ 8V 486pF @ 10V, 642pF @ 10V Automotive, AEC-Q101
IRF5805 MOSFET P-CH 30V 3.8A 6-TSOP Infineon Technologies SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) Micro6™(TSOP-6) P-Channel 2W (Ta) 30V 3.8A (Ta) 98mOhm @ 3.8A, 10V 4.5V, 10V 2.5V @ 250µA 17nC @ 10V 511pF @ 25V ±20V HEXFET®
IPSA70R750P7SAKMA1 MOSFET COOLMOS 700V TO251-3 Infineon Technologies TO-251-3 Short Leads, IPak, TO-251AA Through Hole MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) PG-TO251-3 N-Channel 34.7W (Tc) 700V 6.5A (Tc) 750mOhm @ 1.4A, 10V 10V 3.5V @ 70µA 8.3nC @ 400V 306pF @ 400V ±16V CoolMOS™ P7
MKI80-06T6K IGBT MODULE 600V 89A 210W E1 IXYS E1 89A 600V 210W Chassis Mount Full Bridge Inverter -40°C ~ 125°C (TJ) E1 Trench 500µA 2.3V @ 15V, 75A 4.62nF @ 25V Standard Yes
PH4030AL,115 MOSFET N-CH 30V 100A LFPAK Nexperia USA Inc. SC-100, SOT-669 Surface Mount MOSFET (Metal Oxide) LFPAK56, Power-SO8 N-Channel 30V 100A (Tc) 4mOhm @ 15A, 10V 2.15V @ 1mA 36.6nC @ 10V 2090pF @ 12V TrenchMOS™
PMPB27EP,115 MOSFET P-CH 30V 6.1A 6DFN Nexperia USA Inc. 6-UDFN Exposed Pad Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) DFN2020MD-6 P-Channel 1.7W (Ta), 12.5W (Tc) 30V 6.1A (Ta) 29mOhm @ 6.1A, 10V 4.5V, 10V 2.5V @ 250µA 45nC @ 10V 1570pF @ 15V ±20V
BC32725TAR TRANS PNP 45V 0.8A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 800mA 45V 625mW Through Hole PNP 150°C (TJ) TO-92-3 700mV @ 50mA, 500mA 100nA 160 @ 100mA, 1V 100MHz
MJ11022G TRANS NPN DARL 250V 15A TO204 onsemi TO-204AA, TO-3 15A 250V 175W Through Hole NPN - Darlington -65°C ~ 200°C (TJ) TO-204 (TO-3) 3.4V @ 150mA, 15A 1mA 400 @ 10A, 5V
KSD1406YTU TRANS NPN 60V 3A TO220F-3 onsemi TO-220-3 Full Pack 3A 60V 25W Through Hole NPN 150°C (TJ) TO-220F-3 1V @ 300mA, 3A 100µA (ICBO) 100 @ 500mA, 5V 3MHz
6LN04CH-TL-E-ON N-CHANNEL SILICON MOSFET onsemi
UNR511500L TRANS PREBIAS PNP 150MW SMINI3 Panasonic Electronic Components SC-70, SOT-323 100mA 50V 150mW Surface Mount PNP - Pre-Biased SMini3-G1 10kOhms 250mV @ 300µA, 10mA 500nA 160 @ 5mA, 10V 80MHz
BC560CG SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 100mA 45V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 250mV @ 5mA, 100mA 15nA (ICBO) 380 @ 2mA, 5V 250MHz
STGD7NB60ST4 IGBT 600V 15A 55W DPAK STMicroelectronics TO-252-3, DPak (2 Leads + Tab), SC-63 15A 600V 55W Surface Mount 150°C (TJ) DPAK Standard 1.6V @ 15V, 7A 480V, 7A, 1kOhm, 15V 60A 3.5mJ (off) 33nC 700ns/- PowerMESH™
IRL540S MOSFET N-CH 100V 28A D2PAK Vishay Siliconix TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) D2PAK N-Channel 3.7W (Ta), 150W (Tc) 100V 28A (Tc) 77mOhm @ 17A, 5V 4V, 5V 2V @ 250µA 64nC @ 5V 2200pF @ 25V ±10V
  • 10
  • 15
  • 50
  • 100