-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTRA082808NF-V1-R5 | RF LDMOS FET 280W, 790 - 820MHZ | Cree/Wolfspeed | HBSOF-6-2 | 790MHz ~ 820MHz | 105V | 10µA | LDMOS (Dual), Common Source | PG-HBSOF-6-2 | 280W | 15.5dB | 48V | 200mA | ||||||||||||||||||||||||||||||||||||||||||||
| CGHV31500F | RF MOSFET HEMT 50V 440217 | Cree/Wolfspeed | 440217 | 2.7GHz ~ 3.1GHz | 125V | 24A | HEMT | 440217 | 500W | 13.5dB | 50V | 500mA | GaN | |||||||||||||||||||||||||||||||||||||||||||
| PTVA092407NF-V1-R5 | IC RF LDMOS FET 4HBSOF | Cree/Wolfspeed | HBSOF-4-1 | 869MHz ~ 960MHz | 105V | 10µA | LDMOS | PG-HBSOF-4-1 | 240W | 22.5dB | 48V | 900mA | ||||||||||||||||||||||||||||||||||||||||||||
| PTFB091802FC-V1-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ARF477FL | RF PWR MOSFET 500V 10A | Microsemi Corporation | 65MHz | 500V | 15A | 2 N-Channel (Dual) Common Source | 400W | 16dB | 150V | |||||||||||||||||||||||||||||||||||||||||||||||
| QPD1008L | RF TRANSISTOR 125W 50V NI-360 | RFMD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE4210S01-T1B | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | 4-SMD | 12GHz | 4V | 15mA | HFET | SMD | 13dB | 0.5dB | 2V | 10mA | ||||||||||||||||||||||||||||||||||||||||||||
| SCH2602-TL-E | PCH+NCH 2.5V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FTD2017A-TL-E | NCH+NCH 2.5V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK304E-SPA | NCH J-FET | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3617-S-TL-E | NCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ659-DL-E | PCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF909R,215 | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | SOT-143R | 800MHz | 7V | 40mA | N-Channel Dual Gate | SOT-143R | 2dB | 5V | 15mA | |||||||||||||||||||||||||||||||||||||||||||||
| CPH3303-TL-E | PCH 2.5V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P23080HSR5 | POWER, N-CHANNEL, MOSFET | Rochester Electronics, LLC | NI-780S-4 | 2.3GHz | 65V | LDMOS (Dual) | NI-780S-4 | 16W | 14.6dB | 28V | 280mA |
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