-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: IXYS
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: E1
- Supplier Device Package: E1
- Configuration: Full Bridge Inverter
- Power - Max: 210W
- Current - Collector (Ic) (Max): 89A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 500µA
- Input: Standard
- IGBT Type: Trench
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs (Max): ±10V
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- Manufacturer: Infineon Technologies
- Series: CoolMOS™ P7
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PG-TO251-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V
- Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 34.7W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±16V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 175W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 25W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 3MHz
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: Micro6™(TSOP-6)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 511pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
- Power - Max: 700mW (Ta)
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- Frequency - Transition: 250MHz
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- Manufacturer: Nexperia USA Inc.
- Series: TrenchMOS™
- Mounting Type: Surface Mount
- Package / Case: SC-100, SOT-669
- Supplier Device Package: LFPAK56, Power-SO8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
- Technology: MOSFET (Metal Oxide)
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- Manufacturer: Ampleon USA Inc.
- Series: BLC
- Package / Case: SOT-1258-7
- Supplier Device Package: SOT-1258-7
- Frequency: 1.805GHz ~ 1.88GHz
- Transistor Type: LDMOS
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- Manufacturer: onsemi
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- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Power - Max: 55W
- Input Type: Standard
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 480V, 7A, 1kOhm, 15V
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
- Current - Collector Pulsed (Icm): 60A
- Switching Energy: 3.5mJ (off)
- Gate Charge: 33nC
- Td (on/off) @ 25°C: 700ns/-
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Resistor - Base (R1): 10kOhms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 100MHz
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- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020MD-6
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- 10
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- 100