Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204 (TO-3)
• Power - Max: 175W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 250V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
• Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F-3
• Power - Max: 25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 3MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Power - Max: 12.5W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
• Frequency - Transition: 40MHz

• Manufacturer: General Semiconductor
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 15W
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
• Frequency - Transition: 30MHz

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: NXP USA Inc.
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 50MHz

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4
• Power - Max: 1.2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 75MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: -20°C ~ 85°C (TA)
• Package / Case: 16-PowerDIP (0.300", 7.62mm)
• Supplier Device Package: 16-PowerDIP (20x7.10)
• Power - Max: 1W
• Transistor Type: 4 NPN Darlington (Quad)
• Current - Collector (Ic) (Max): 1.75A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23
• Power - Max: 330mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz