- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 175W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 25W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 3MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- Frequency - Transition: 250MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 100MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Power - Max: 12.5W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Frequency - Transition: 40MHz
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- Manufacturer: General Semiconductor
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 15W
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Frequency - Transition: 30MHz
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- Frequency - Transition: 200MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 75MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: -20°C ~ 85°C (TA)
- Package / Case: 16-PowerDIP (0.300", 7.62mm)
- Supplier Device Package: 16-PowerDIP (20x7.10)
- Power - Max: 1W
- Transistor Type: 4 NPN Darlington (Quad)
- Current - Collector (Ic) (Max): 1.75A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 330mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
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- Offers in stock:
- 10
- 15
- 50
- 100