Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.7A

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 2
  • 2SA2195,LF
    TRANS PNP 50V 1.7A UFM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-SMD, Flat Leads
    • Supplier Device Package: UFM
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.7A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • PBSS5260QAZ
    TRANS PNP 60V 1.7A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.7A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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