- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5260QAZ | TRANS PNP 60V 1.7A DFN1010D-3 | Nexperia USA Inc. | 3-XDFN Exposed Pad | 1.7A | 60V | 325mW | Surface Mount | PNP | 150°C (TJ) | DFN1010D-3 | 400mV @ 50mA, 1A | 100nA (ICBO) | 30 @ 1.7A, 2V | 150MHz |
| 2SA2195,LF | TRANS PNP 50V 1.7A UFM | Toshiba Semiconductor and Storage | 3-SMD, Flat Leads | 1.7A | 50V | 500mW | Surface Mount | PNP | 150°C (TJ) | UFM | 200mV @ 33mA, 1A | 100nA (ICBO) | 200 @ 300mA, 2V |
- 10
- 15
- 50
- 100