Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A, 700mA
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: VS-6 (2.9x2.8)
- Power - Max: 400mW
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1A, 700mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100