Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.5A
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 4V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 5µA (ICBO)
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
- Power - Max: 40W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.25W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TP-FA
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 120MHz
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-96
- Supplier Device Package: TSMT3
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 300MHz
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- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 190MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.25W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 120MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220D-A1
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92-3
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
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- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 625mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 1.5A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 160MHz
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
- Power - Max: 1.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
- Power - Max: 1.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
- Power - Max: 40W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 1mA
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- 100