Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A, 800mA

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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Found: 1
  • TPCP8901(TE85L,F,M
    X35 PB-F POWER MOSFET TRANSISTOR
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: PS-8
    • Power - Max: 1.48W
    • Transistor Type: NPN, PNP
    • Current - Collector (Ic) (Max): 1A, 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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