Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 18A
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 130W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2A, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 10MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 180W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 30MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 180W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 30MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100