Semiconductors, Transistors, Transistors - IGBTs - Arrays
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
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- Manufacturer: IXYS
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: E1
- Supplier Device Package: E1
- Configuration: Full Bridge Inverter
- Power - Max: 210W
- Current - Collector (Ic) (Max): 89A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 500µA
- Input: Standard
- IGBT Type: Trench
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Power - Max: 55W
- Input Type: Standard
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 480V, 7A, 1kOhm, 15V
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
- Current - Collector Pulsed (Icm): 60A
- Switching Energy: 3.5mJ (off)
- Gate Charge: 33nC
- Td (on/off) @ 25°C: 700ns/-
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- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 75W
- Input Type: Standard
- Current - Collector (Ic) (Max): 17.5 A
- Voltage - Collector Emitter Breakdown (Max): 500V
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Gate Charge: 19nC
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6-P
- Configuration: Three Phase
- Power - Max: 176W
- Current - Collector (Ic) (Max): 80A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 250µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP3
- Supplier Device Package: SP3
- Configuration: Full Bridge Inverter
- Power - Max: 62W
- Current - Collector (Ic) (Max): 32A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 250µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
- Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Reverse Recovery Time (trr): 80ns
- Power - Max: 595W
- Input Type: Standard
- Current - Collector (Ic) (Max): 100A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Test Condition: 400V, 75A, 10Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Current - Collector Pulsed (Icm): 200A
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Gate Charge: 310nC
- Td (on/off) @ 25°C: 110ns/270ns
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Three Phase Inverter
- Power - Max: 64W
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
- Input Capacitance (Cies) @ Vce: 700pF @ 25V
- NTC Thermistor: No
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
- Power - Max: 267W
- Input Type: Standard
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 15A, 10Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Current - Collector Pulsed (Icm): 45A
- Switching Energy: 740µJ (on), 600µJ (off)
- Gate Charge: 41nC
- Td (on/off) @ 25°C: 30ns/70ns
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Asymmetrical Bridge
- Power - Max: 690W
- Current - Collector (Ic) (Max): 220A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
- NTC Thermistor: No
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- Manufacturer: IXYS
- Series: GenX3™, XPT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Reverse Recovery Time (trr): 195ns
- Power - Max: 230W
- Input Type: Standard
- Current - Collector (Ic) (Max): 36A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 20A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Current - Collector Pulsed (Icm): 88A
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Gate Charge: 53nC
- Td (on/off) @ 25°C: 20ns/90ns
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
- Configuration: Dual, Common Source
- Power - Max: 833W
- Current - Collector (Ic) (Max): 220A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 300µA
- Input: Standard
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
- Input Capacitance (Cies) @ Vce: 8.6nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: IXYS
- Series: GenX3™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
- Power - Max: 1250W
- Input Type: Standard
- Current - Collector (Ic) (Max): 230A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 80A, 2Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Current - Collector Pulsed (Icm): 500A
- Switching Energy: 5mJ (on), 3.3mJ (off)
- Gate Charge: 350nC
- Td (on/off) @ 25°C: 30ns/210ns
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- Manufacturer: IXYS
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- Configuration: Single
- Power - Max: 250W
- Current - Collector (Ic) (Max): 75A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Input Capacitance (Cies) @ Vce: 3.85nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Reverse Recovery Time (trr): 50ns
- Power - Max: 370W
- Input Type: Standard
- Current - Collector (Ic) (Max): 75A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 390V, 33A, 3.3Ohm, 15V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Current - Collector Pulsed (Icm): 150A
- Switching Energy: 360µJ (on), 380µJ (off)
- Gate Charge: 240nC
- Td (on/off) @ 25°C: 34ns/130ns
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Reverse Recovery Time (trr): 50ns
- Power - Max: 200W
- Input Type: Standard
- Current - Collector (Ic) (Max): 55A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 480V, 30A, 4.7Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Current - Collector Pulsed (Icm): 110A
- Switching Energy: 700µJ (off)
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 30ns/90ns
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- 100