-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB120N08S404ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 179W (Tc) | 80V | 120A (Tc) | 4.1mOhm @ 100A, 10V | 10V | 4V @ 120µA | 95nC @ 10V | 6450pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ |
| BUZ30AH3045AATMA1 | MOSFET N-CH 200V 21A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 200V | 21A (Tc) | 130mOhm @ 13.5A, 10V | 10V | 4V @ 1mA | 1900pF @ 25V | ±20V | SIPMOS® | |
| IRF540ZSTRLPBF | MOSFET N-CH 100V 36A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 92W (Tc) | 100V | 36A (Tc) | 26.5mOhm @ 22A, 10V | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | HEXFET® |
| IPB60R160C6ATMA1 | MOSFET N-CH 600V 23.8A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 176W (Tc) | 600V | 23.8A (Tc) | 160mOhm @ 11.3A, 10V | 10V | 3.5V @ 750µA | 75nC @ 10V | 1660pF @ 100V | ±20V | CoolMOS™ |
| IPB65R310CFDATMA1 | MOSFET N-CH 650V 11.4A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104.2W (Tc) | 650V | 11.4A (Tc) | 310mOhm @ 4.4A, 10V | 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | ±20V | CoolMOS™ |
| BUZ32 E3045A | MOSFET N-CH 200V 9.5A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 75W (Tc) | 200V | 9.5A (Tc) | 400mOhm @ 6A, 10V | 10V | 4V @ 1mA | 530pF @ 25V | ±20V | SIPMOS® | |
| IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 75V | 120A (Tc) | 2mOhm @ 100A, 10V | 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | ±20V | OptiMOS™ |
| IPB60R360P7ATMA1 | MOSFET TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 41W (Tc) | 600V | 9A (Tc) | 360mOhm @ 2.7A, 10V | 10V | 4V @ 140µA | 13nC @ 10V | 555pF @ 400V | ±20V | CoolMOS™ P7 |
| IPB049NE7N3GATMA1 | MOSFET N-CH 75V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 75V | 80A (Tc) | 4.9mOhm @ 80A, 10V | 10V | 3.8V @ 91µA | 68nC @ 10V | 4750pF @ 37.5V | ±20V | OptiMOS™ |
| IPB120P04P4L03ATMA1 | MOSFET P-CH 40V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 136W (Tc) | 40V | 120A (Tc) | 3.1mOhm @ 100A, 10V | 4.5V, 10V | 2.2V @ 340µA | 234nC @ 10V | 15000pF @ 25V | ±16V | OptiMOS™ |
| IPB05CN10N G | MOSFET N-CH 100V 100A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 100V | 100A (Tc) | 5.1mOhm @ 100A, 10V | 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | ±20V | OptiMOS™ |
| IPB075N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 56W (Tc) | 40V | 50A (Tc) | 7.5mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 20µA | 36nC @ 10V | 2800pF @ 25V | ±20V | OptiMOS™ |
| IPB13N03LB | MOSFET N-CH 30V 30A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 52W (Tc) | 30V | 30A (Tc) | 12.5mOhm @ 30A, 10V | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1355pF @ 15V | ±20V | OptiMOS™ |
| IPB042N10N3GATMA1 | MOSFET N-CH 100V 100A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 100V | 100A (Tc) | 4.2mOhm @ 50A, 10V | 6V, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | ±20V | OptiMOS™ |
| IPB60R280P7ATMA1 | MOSFET TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 53W (Tc) | 600V | 12A (Tc) | 280mOhm @ 3.8A, 10V | 10V | 4V @ 190µA | 18nC @ 10V | 761pF @ 400V | ±20V | CoolMOS™ P7 |
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