-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB65R310CFDAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 104.2W (Tc) | 650V | 11.4A (Tc) | 310mOhm @ 4.4A, 10V | 10V | 4.5V @ 440µA | 41nC @ 10V | 1110pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
| IRFS7762PBF | MOSFET N-CH 75V 104A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 75V | 85A (Tc) | 6.7mOhm @ 51A, 10V | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | ±20V | HEXFET® |
| IPB054N06N3GATMA1 | MOSFET N-CH 60V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 115W (Tc) | 60V | 80A (Tc) | 5.4mOhm @ 80A, 10V | 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | ±20V | OptiMOS™ |
| IPB60R120P7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 95W (Tc) | 650V | 26A (Tc) | 120mOhm @ 8.2A, 10V | 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | ±20V | CoolMOS™ P7 |
| IPB600N25N3GATMA1 | MOSFET N-CH 250V 25A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 136W (Tc) | 250V | 25A (Tc) | 60mOhm @ 25A, 10V | 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | ±20V | OptiMOS™ |
| IPB65R660CFDATMA1 | MOSFET N-CH 650V 6A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 62.5W (Tc) | 650V | 6A (Tc) | 660mOhm @ 2.1A, 10V | 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | ±20V | CoolMOS™ |
| IPB052N04NGATMA1 | MOSFET N-CH 40V 70A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 40V | 70A (Tc) | 5.2mOhm @ 70A, 10V | 10V | 4V @ 33µA | 42nC @ 10V | 3300pF @ 20V | ±20V | OptiMOS™ |
| IPB083N15N5LFATMA1 | MOSFET N-CH 150V 105A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 179W (Tc) | 150V | 105A (Tc) | 8.3mOhm @ 100A, 10V | 10V | 4.9V @ 134µA | 45nC @ 10V | 210pF @ 75V | ±20V | OptiMOS™ |
| IPB04N03LB G | MOSFET N-CH 30V 80A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 107W (Tc) | 30V | 80A (Tc) | 3.5mOhm @ 55A, 10V | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | OptiMOS™ |
| IPB120N03S4L03ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 30V | 120A (Tc) | 3mOhm @ 100A, 10V | 4.5V, 10V | 2.2V @ 40µA | 72nC @ 10V | 5300pF @ 25V | ±16V | Automotive, AEC-Q101, OptiMOS™ |
| IPB12CNE8N G | MOSFET N-CH 85V 67A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 85V | 67A (Tc) | 12.9mOhm @ 67A, 10V | 10V | 4V @ 83µA | 64nC @ 10V | 4340pF @ 40V | ±20V | OptiMOS™ |
| IPB027N10N3GATMA1 | MOSFET N-CH 100V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 100V | 120A (Tc) | 2.7mOhm @ 100A, 10V | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | OptiMOS™ |
| IPB120N04S4L02ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 158W (Tc) | 40V | 120A (Tc) | 1.7mOhm @ 100A, 10V | 4.5V, 10V | 2.2V @ 110µA | 190nC @ 10V | 14560pF @ 25V | +20V, -16V | Automotive, AEC-Q101, OptiMOS™ |
| IPB035N08N3GATMA1 | MOSFET N-CH 80V 100A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 80V | 100A (Tc) | 3.5mOhm @ 100A, 10V | 6V, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | ±20V | OptiMOS™ |
| IPB107N20NAATMA1 | MOSFET N-CH 200V 88A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 200V | 88A (Tc) | 10.7mOhm @ 88A, 10V | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | OptiMOS™ |
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