-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS7787PBF | MOSFET N-CH 75V 76A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 75V | 76A (Tc) | 8.4mOhm @ 46A, 10V | 6V, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | ±20V | HEXFET® |
| IPB03N03LB G | MOSFET N-CH 30V 80A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 30V | 80A (Tc) | 2.8mOhm @ 55A, 10V | 4.5V, 10V | 2V @ 100µA | 59nC @ 5V | 7624pF @ 15V | ±20V | OptiMOS™ |
| IPB60R600C6ATMA1 | MOSFET N-CH 600V 7.3A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 63W (Tc) | 600V | 7.3A (Tc) | 600mOhm @ 2.4A, 10V | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | CoolMOS™ |
| IPB029N06N3GE8187ATMA1 | MOSFET N-CH 60V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 188W (Tc) | 60V | 120A (Tc) | 3.2mOhm @ 100A, 10V | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | OptiMOS™ |
| IPB020N08N5ATMA1 | MOSFET N-CH 80V 140A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 80V | 120A (Tc) | 2mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 208µA | 166nC @ 10V | 12100pF @ 40V | ±20V | OptiMOS™ |
| IPB070N06L G | MOSFET N-CH 60V 80A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 60V | 80A (Tc) | 6.7mOhm @ 80A, 10V | 4.5V, 10V | 2V @ 150µA | 126nC @ 10V | 4300pF @ 30V | ±20V | OptiMOS™ |
| IPB097N08N3 G | MOSFET N-CH 80V 70A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 100W (Tc) | 80V | 70A (Tc) | 9.7mOhm @ 46A, 10V | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | ±20V | OptiMOS™ |
| IPB230N06L3GATMA1 | MOSFET N-CH 60V 30A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 36W (Tc) | 60V | 30A (Tc) | 23mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 11µA | 10nC @ 4.5V | 1600pF @ 30V | ±20V | OptiMOS™ |
| IPB041N04NGATMA1 | MOSFET N-CH 40V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 4.1mOhm @ 80A, 10V | 10V | 4V @ 45µA | 56nC @ 10V | 4500pF @ 20V | ±20V | OptiMOS™ |
| IPB120P04P404ATMA1 | MOSFET P-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 136W (Tc) | 40V | 120A (Tc) | 3.5mOhm @ 100A, 10V | 10V | 4V @ 340µA | 205nC @ 10V | 14790pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ |
| IPB60R520CPATMA1 | MOSFET N-CH 600V 6.8A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 66W (Tc) | 600V | 6.8A (Tc) | 520mOhm @ 3.8A, 10V | 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | ±20V | CoolMOS™ |
| IPB06N03LB | MOSFET N-CH 30V 50A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 83W (Tc) | 30V | 50A (Tc) | 6.3mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2782pF @ 15V | ±20V | OptiMOS™ |
| IPB037N06N3GATMA1 | MOSFET N-CH 60V 90A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 188W (Tc) | 60V | 90A (Tc) | 3.7mOhm @ 90A, 10V | 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | ±20V | OptiMOS™ |
| IPB042N03LGATMA1 | MOSFET N-CH 30V 70A TO-263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 30V | 70A (Tc) | 4.2mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 250µA | 38nC @ 10V | 3900pF @ 15V | ±20V | OptiMOS™ |
| BUZ31 E3045A | MOSFET N-CH 200V 14.5A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 95W (Tc) | 200V | 14.5A (Tc) | 200mOhm @ 9A, 5V | 10V | 4V @ 1mA | 1120pF @ 25V | ±20V | SIPMOS® |
- 10
- 15
- 50
- 100