-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB65R280E6ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 650V | 13.8A (Tc) | 280mOhm @ 4.4A, 10V | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | CoolMOS™ E6 |
| IPB65R660CFDAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 62.5W (Tc) | 650V | 6A (Tc) | 660mOhm @ 3.2A, 10V | 10V | 4.5V @ 200µA | 20nC @ 10V | 543pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
| IPB530N15N3GATMA1 | MOSFET N-CH 150V 21A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 150V | 21A (Tc) | 53mOhm @ 18A, 10V | 8V, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | ±20V | OptiMOS™ |
| IRFS7787TRLPBF | MOSFET N-CH 75V 76A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 75V | 76A (Tc) | 8.4mOhm @ 46A, 10V | 6V, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB031N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 80V | 120A (Tc) | 3.1mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 108µA | 87nC @ 10V | 6240pF @ 40V | ±20V | OptiMOS™ |
| BUZ30A E3045A | MOSFET N-CH 200V 21A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 200V | 21A (Tc) | 130mOhm @ 13.5A, 10V | 10V | 4V @ 1mA | 1900pF @ 25V | ±20V | SIPMOS® | |
| IPB16CN10N G | MOSFET N-CH 100V 53A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 100W (Tc) | 100V | 53A (Tc) | 16.5mOhm @ 53A, 10V | 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | ±20V | OptiMOS™ |
| AUIRFS4127TRL | MOSFET NCH 200V 72A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 200V | 72A (Tc) | 22mOhm @ 44A, 10V | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | Automotive, AEC-Q101, HEXFET® |
| IPB06CN10N G | MOSFET N-CH 100V 100A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 100V | 100A (Tc) | 6.2mOhm @ 100A, 10V | 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | ±20V | OptiMOS™ |
| IPB34CN10NGATMA1 | MOSFET N-CH 100V 27A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 58W (Tc) | 100V | 27A (Tc) | 34mOhm @ 27A, 10V | 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | ±20V | OptiMOS™ |
| IPB60R099C6ATMA1 | MOSFET N-CH 600V 37.9A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 278W (Tc) | 600V | 37.9A (Tc) | 99mOhm @ 18.1A, 10V | 10V | 3.5V @ 1.21mA | 119nC @ 10V | 2660pF @ 100V | ±20V | CoolMOS™ |
| IPB320N20N3GATMA1 | MOSFET N-CH 200V 34A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 136W (Tc) | 200V | 34A (Tc) | 32mOhm @ 34A, 10V | 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | ±20V | OptiMOS™ |
| IPB65R600C6ATMA1 | MOSFET N-CH 650V 7.3A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 63W (Tc) | 650V | 7.3A (Tc) | 600mOhm @ 2.1A, 10V | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | CoolMOS™ |
| IPB120N04S3-02 | MOSFET N-CH 40V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 40V | 120A (Tc) | 2mOhm @ 80A, 10V | 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | ±20V | OptiMOS™ |
| IPB65R190C7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 72W (Tc) | 650V | 13A (Tc) | 190mOhm @ 5.7A, 10V | 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | ±20V | CoolMOS™ C7 |
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