• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 184
  • IPB65R280E6ATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ E6
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 440µA
    • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB65R660CFDAATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 200µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 62.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB530N15N3GATMA1
    MOSFET N-CH 150V 21A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 35µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 68W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
    • Vgs (Max): ±20V
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  • IRFS7787TRLPBF
    MOSFET N-CH 75V 76A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IPB031N08N5ATMA1
    MOSFET N-CH 80V TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 108µA
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 167W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • BUZ30A E3045A
    MOSFET N-CH 200V 21A TO-263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB16CN10N G
    MOSFET N-CH 100V 53A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
    • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 61µA
    • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRFS4127TRL
    MOSFET NCH 200V 72A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB06CN10N G
    MOSFET N-CH 100V 100A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 180µA
    • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 214W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB34CN10NGATMA1
    MOSFET N-CH 100V 27A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 27A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 29µA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 58W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB60R099C6ATMA1
    MOSFET N-CH 600V 37.9A TO263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
    • Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 278W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB320N20N3GATMA1
    MOSFET N-CH 200V 34A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 90µA
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 136W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB65R600C6ATMA1
    MOSFET N-CH 650V 7.3A TO263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 210µA
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 63W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB120N04S3-02
    MOSFET N-CH 40V 120A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 230µA
    • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB65R190C7ATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ C7
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 290µA
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 72W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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