-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB017N08N5ATMA1 | MOSFET N-CH 80V 120A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 80V | 120A (Tc) | 1.7mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 280µA | 223nC @ 10V | 16900pF @ 40V | ±20V | OptiMOS™ |
| IRFS7540TRLPBF | MOSFET N CH 60V 110A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 160W (Tc) | 60V | 110A (Tc) | 5.1mOhm @ 65A, 10V | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB042N10N3GE8187ATMA1 | MOSFET N-CH 100V 100A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 100V | 100A (Tc) | 4.2mOhm @ 50A, 10V | 6V, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | ±20V | OptiMOS™ |
| IPB60R330P6ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 93W (Tc) | 600V | 12A (Tc) | 330mOhm @ 4.5A, 10V | 10V | 4.5V @ 370µA | 22nC @ 10V | 1010pF @ 100V | ±20V | CoolMOS™ P6 |
| IPB034N03LGATMA1 | MOSFET N-CH 30V 80A TO-263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 30V | 80A (Tc) | 3.4mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | OptiMOS™ |
| IPB144N12N3GATMA1 | MOSFET N-CH 120V 56A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 107W (Tc) | 120V | 56A (Ta) | 14.4mOhm @ 56A, 10V | 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | ±20V | OptiMOS™ |
| IPB06N03LB G | MOSFET N-CH 30V 50A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 83W (Tc) | 30V | 50A (Tc) | 6.3mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2782pF @ 15V | ±20V | OptiMOS™ |
| IPB026N06NATMA1 | MOSFET N-CH 60V 25A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3W (Ta), 136W (Tc) | 60V | 25A (Ta), 100A (Tc) | 2.6mOhm @ 100A, 10V | 6V, 10V | 2.8V @ 75µA | 56nC @ 10V | 4100pF @ 30V | ±20V | OptiMOS™ |
| IPB065N10N3GATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 100V | 80A (Tc) | 6.5mOhm @ 80A, 10V | 6V, 10V | 3.5V @ 90µA | 64nC @ 10V | 4910pF @ 50V | ±20V | OptiMOS™ |
| IPB090N06N3GATMA1 | MOSFET N-CH 60V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 60V | 50A (Tc) | 9mOhm @ 50A, 10V | 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | ±20V | OptiMOS™ |
| IPB65R150CFDATMA1 | MOSFET N-CH 650V 22.4A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 195.3W (Tc) | 650V | 22.4A (Tc) | 150mOhm @ 9.3A, 10V | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | CoolMOS™ |
| IPB067N08N3GATMA1 | MOSFET N-CH 80V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 136W (Tc) | 80V | 80A (Tc) | 6.7mOhm @ 73A, 10V | 6V, 10V | 3.5V @ 73µA | 56nC @ 10V | 3840pF @ 40V | ±20V | OptiMOS™ |
| IPB12CN10N G | MOSFET N-CH 100V 67A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 100V | 67A (Tc) | 12.6mOhm @ 67A, 10V | 10V | 4V @ 83µA | 65nC @ 10V | 4320pF @ 50V | ±20V | OptiMOS™ |
| IPB60R199CPAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 139W (Tc) | 600V | 16A (Tc) | 199mOhm @ 9.9A, 10V | 10V | 3.5V @ 1.1mA | 43nC @ 10V | 1520pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
| IPB120N06N G | MOSFET N-CH 60V 75A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 158W (Tc) | 60V | 75A (Tc) | 11.7mOhm @ 75A, 10V | 10V | 4V @ 94µA | 62nC @ 10V | 2100pF @ 30V | ±20V | OptiMOS™ |
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