• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 184
  • IPB017N08N5ATMA1
    MOSFET N-CH 80V 120A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 280µA
    • Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRFS7540TRLPBF
    MOSFET N CH 60V 110A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB042N10N3GE8187ATMA1
    MOSFET N-CH 100V 100A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 214W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB60R330P6ATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P6
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 370µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 93W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB034N03LGATMA1
    MOSFET N-CH 30V 80A TO-263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB144N12N3GATMA1
    MOSFET N-CH 120V 56A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 120V
    • Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
    • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 61µA
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 107W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB06N03LB G
    MOSFET N-CH 30V 50A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 40µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB026N06NATMA1
    MOSFET N-CH 60V 25A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.8V @ 75µA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3W (Ta), 136W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB065N10N3GATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 90µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB090N06N3GATMA1
    MOSFET N-CH 60V 50A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 34µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 71W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB65R150CFDATMA1
    MOSFET N-CH 650V 22.4A TO-263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 900µA
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 195.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB067N08N3GATMA1
    MOSFET N-CH 80V 80A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 73µA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3840pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 136W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB12CN10N G
    MOSFET N-CH 100V 67A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.6mOhm @ 67A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 83µA
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB60R199CPAATMA1
    MOSFET N-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
    • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 139W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IPB120N06N G
    MOSFET N-CH 60V 75A TO-263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 94µA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 158W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100