-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB35N10S3L26ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 100V | 35A (Tc) | 26.3mOhm @ 35A, 10V | 4.5V, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ |
| IPB200N15N3GATMA1 | MOSFET N-CH 150V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 150V | 50A (Tc) | 20mOhm @ 50A, 10V | 8V, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | ±20V | OptiMOS™ |
| IPB015N04LGATMA1 | MOSFET N-CH 40V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 40V | 120A (Tc) | 1.5mOhm @ 100A, 10V | 4.5V, 10V | 2V @ 200µA | 346nC @ 10V | 28000pF @ 25V | ±20V | OptiMOS™ |
| IPB60R380C6ATMA1 | MOSFET N-CH 600V 10.6A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 83W (Tc) | 600V | 10.6A (Tc) | 380mOhm @ 3.8A, 10V | 10V | 3.5V @ 320µA | 32nC @ 10V | 700pF @ 100V | ±20V | CoolMOS™ |
| IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 250V | 64A (Tc) | 20mOhm @ 64A, 10V | 10V | 4V @ 270µA | 86nC @ 10V | 7100pF @ 100V | ±20V | OptiMOS™ |
| IPB136N08N3 G | MOSFET N-CH 80V 45A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 80V | 45A (Tc) | 13.6mOhm @ 45A, 10V | 6V, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | ±20V | OptiMOS™ |
| AUIRF1404ZSTRL | MOSFET N-CH 40V 160A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 40V | 160A (Tc) | 3.7mOhm @ 75A, 10V | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | HEXFET® |
| IRFS7730PBF | MOSFET N-CH 75V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 75V | 195A (Tc) | 2.6mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IPB108N15N3GATMA1 | MOSFET N-CH 150V 83A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 214W (Tc) | 150V | 83A (Tc) | 10.8mOhm @ 83A, 10V | 8V, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | ±20V | OptiMOS™ |
| AUIRF1324STRL7P | MOSFET NCH 24V 340A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 24V | 340A (Tc) | 1.65mOhm @ 195A, 10V | 10V | 4V @ 250µA | 240nC @ 10V | 7590pF @ 24V | ±20V | Automotive, AEC-Q101, HEXFET® |
| IPB083N10N3GATMA1 | MOSFET N-CH 100V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 100V | 80A (Tc) | 8.3mOhm @ 73A, 10V | 6V, 10V | 3.5V @ 75µA | 55nC @ 10V | 3980pF @ 50V | ±20V | OptiMOS™ |
| IPB65R095C7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 128W (Tc) | 650V | 24A (Tc) | 95mOhm @ 11.8A, 10V | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | CoolMOS™ C7 |
| IPB057N06NATMA1 | MOSFET N-CH 60V 17A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3W (Ta), 83W (Tc) | 60V | 17A (Ta), 45A (Tc) | 5.7mOhm @ 45A, 10V | 6V, 10V | 2.8V @ 36µA | 27nC @ 10V | 2000pF @ 30V | ±20V | OptiMOS™ |
| IPB60R950C6ATMA1 | MOSFET N-CH 600V 4.4A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 37W (Tc) | 600V | 4.4A (Tc) | 950mOhm @ 1.5A, 10V | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | CoolMOS™ |
| IPB60R060P7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 164W (Tc) | 650V | 48A (Tc) | 60mOhm @ 15.9A, 10V | 10V | 4V @ 800µA | 67nC @ 10V | 2895pF @ 400V | ±20V | CoolMOS™ P7 |
- 10
- 15
- 50
- 100