Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 8-ThinPak (5x6)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • IPL60R650P6SATMA1
    MOSFET N-CH 600V 8THINPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P6
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-ThinPak (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
    • Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 200µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 56.8W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPL60R360P6SATMA1
    MOSFET N-CH 600V 8THINPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P6
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-ThinPak (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 370µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 89.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • 100