• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IPL60R650P6SATMA1 MOSFET N-CH 600V 8THINPAK Infineon Technologies 8-ThinPak (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 56.8W (Tc) 600V 6.7A (Tc) 650mOhm @ 2.4A, 10V 10V 4.5V @ 200µA 12nC @ 10V 557pF @ 100V ±20V CoolMOS™ P6
IPL60R360P6SATMA1 MOSFET N-CH 600V 8THINPAK Infineon Technologies 8-ThinPak (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 89.3W (Tc) 600V 11.3A (Tc) 360mOhm @ 4.5A, 10V 10V 4.5V @ 370µA 22nC @ 10V 1010pF @ 100V ±20V CoolMOS™ P6
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  • 50
  • 100