Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies DIRECTFET L8
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: StrongIRFET™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 20082pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q101, OptiMOS™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10655pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): 60V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DirectFET™ Isometric L8
- Supplier Device Package: DIRECTFET L8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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