• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 24
  • IRF7779L2TR1PBF
    MOSFET N-CH 150V 375A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7749L2TR1PBF
    MOSFET N-CH 60V 375A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7739L2TR
    MOSFET N-CH 40V 375A DIRECTFET2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
    • Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7769L2TR
    MOSFET N-CH 100V 375A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF8739L2TR
    MOSFET N-CH 40V 545A AUTO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 17890pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): 40V
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  • IRF7769L2TR1PBF
    MOSFET N-CH 100V 375A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7779L2TRPBF
    MOSFET N-CH 150V DIRECTFET L8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7759L2TR
    MOSFET N-CH 75V 160A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7799L2TRPBF
    MOSFET N-CH 250V DIRECTFET L8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
    • Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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