Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 8-PQFN (3.3x3.3), Power33

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
  • IRFHM7194TRPBF
    MOSFET N-CH 100V 9.3A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
    • Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3.6V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFHM8363TRPBF
    MOSFET 2N-CH 30V 11A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A
    • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
    • Power - Max: 2.7W
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  • IRFHM9391TRPBF
    MOSFET P-CH 30V 11A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
    • Rds On (Max) @ Id, Vgs: 14.6mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1543pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±25V
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  • IRFHM8330TRPBF
    MOSFET N-CH 30V 16A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM8334TRPBF
    MOSFET N-CH 30V 13A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM8228TRPBF
    MOSFET N-CH 25V 19A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1667pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM792TRPBF
    MOSFET 2N-CH 100V 2.3A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 2.3A
    • Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
    • Power - Max: 2.3W
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  • IRFHM8235TRPBF
    MOSFET N-CH 25V 16A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3W (Ta), 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM8337TRPBF
    MOSFET N-CH 30V 12A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
    • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM8342TRPBF
    MOSFET N-CH 30V 10A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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