• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IRFHM7194TRPBF MOSFET N-CH 100V 9.3A Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.8W (Ta), 37W (Tc) 100V 9.3A (Ta), 34A (Tc) 16.4mOhm @ 20A, 10V 10V 3.6V @ 50µA 19nC @ 10V 733pF @ 50V ±20V FASTIRFET™, HEXFET®
IRFHM8363TRPBF MOSFET 2N-CH 30V 11A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 2.7W Surface Mount 8-PowerVDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 11A Logic Level Gate 14.9mOhm @ 10A, 10V 2.35V @ 25µA 15nC @ 10V 1165pF @ 10V HEXFET®
IRFHM9391TRPBF MOSFET P-CH 30V 11A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.6W (Ta) 30V 11A (Ta) 14.6mOhm @ 11A, 10V 4.5V, 10V 2.4V @ 25µA 16nC @ 10V 1543pF @ 25V ±25V HEXFET®
IRFHM8330TRPBF MOSFET N-CH 30V 16A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.7W (Ta), 33W (Tc) 30V 16A (Ta) 6.6mOhm @ 20A, 10V 4.5V, 10V 2.35V @ 25µA 20nC @ 10V 1450pF @ 25V ±20V HEXFET®
IRFHM8334TRPBF MOSFET N-CH 30V 13A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.7W (Ta), 28W (Tc) 30V 13A (Ta) 9mOhm @ 20A, 10V 4.5V, 10V 2.35V @ 25µA 15nC @ 10V 1180pF @ 10V ±20V HEXFET®
IRFHM8228TRPBF MOSFET N-CH 25V 19A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.8W (Ta), 34W (Tc) 25V 19A (Ta) 5.2mOhm @ 20A, 10V 4.5V, 10V 2.35V @ 25µA 18nC @ 10V 1667pF @ 10V ±20V HEXFET®
IRFHM792TRPBF MOSFET 2N-CH 100V 2.3A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 2.3W Surface Mount 8-PowerVDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 100V 2.3A Standard 195mOhm @ 2.9A, 10V 4V @ 10µA 6.3nC @ 10V 251pF @ 25V HEXFET®
IRFHM8235TRPBF MOSFET N-CH 25V 16A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3W (Ta), 30W (Tc) 25V 16A (Ta) 7.7mOhm @ 20A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1040pF @ 10V ±20V HEXFET®
IRFHM8337TRPBF MOSFET N-CH 30V 12A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.8W (Ta), 25W (Tc) 30V 12A (Ta) 12.4mOhm @ 12A, 10V 4.5V, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V ±20V HEXFET®
IRFHM8342TRPBF MOSFET N-CH 30V 10A 8PQFN Infineon Technologies 8-PQFN (3.3x3.3), Power33 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.6W (Ta), 20W (Tc) 30V 10A (Ta) 16mOhm @ 17A, 10V 4.5V, 10V 2.35V @ 25µA 7.5nC @ 4.5V 560pF @ 25V ±20V HEXFET®
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  • 100