Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 6-PQFN (2x2)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 17
  • IRLHS6276TRPBF
    MOSFET 2N-CH 20V 4.5A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-VQFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
    • Power - Max: 1.5W
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  • IRFHS9301TR2PBF
    MOSFET P-CH 30V 6A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFHS9351TRPBF
    MOSFET 2P-CH 30V 2.3A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-VQFN Exposed Pad
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 2.3A
    • Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
    • Power - Max: 1.4W
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  • IRLHS6342TR2PBF
    MOSFET N-CH 30V 8.7A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRL80HS120
    MOSFET N-CH 80V 12.5A 6PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 6-VDFN Exposed Pad
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 11.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRLHS6242TRPBF
    MOSFET N-CH 20V 10A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRFHS8242TRPBF
    MOSFET N-CH 25V 9.9A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHS9301TRPBF
    MOSFET P-CH 30V 6A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRL100HS121
    MOSFET N-CH 100V 6PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 6-VDFN Exposed Pad
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
    • Vgs(th) (Max) @ Id: 2.3V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 11.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHS8242TR2PBF
    MOSFET N-CH 25V 9.9A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
    • Technology: MOSFET (Metal Oxide)
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  • IRLHS6342TRPBF
    MOSFET N-CH 30V 8.7A 2X2 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRL60HS118
    MOSFET N-CH 60V 18.5A 6PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 6-VDFN Exposed Pad
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.3V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 11.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRLHS2242TR2PBF
    MOSFET P-CH 20V 5.8A 2X2 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
    • Technology: MOSFET (Metal Oxide)
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  • IRLHS6242TR2PBF
    MOSFET N-CH 20V 10A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 6-PowerVDFN
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V
    • Technology: MOSFET (Metal Oxide)
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  • IRLHS6376TRPBF
    MOSFET 2N-CH 30V 3.6A 6PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-VDFN Exposed Pad
    • Supplier Device Package: 6-PQFN (2x2)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A
    • Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
    • Power - Max: 1.5W
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