-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLHS2242TRPBF | MOSFET P-CH 20V 15A 2X2 PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.1W (Ta), 9.6W (Tc) | 20V | 7.2A (Ta), 15A (Tc) | 31mOhm @ 8.5A, 4.5V | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | ±12V | HEXFET® | ||
| IRLHS6376TR2PBF | MOSFET 2N-CH 30V 3.6A PQFN | Infineon Technologies | 6-PQFN (2x2) | 1.5W | Surface Mount | 6-VDFN Exposed Pad | 2 N-Channel (Dual) | 30V | 3.6A | Logic Level Gate | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V |
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