Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 8-SOIC

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 23
  • AUIRF7343Q
    MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
    • Power - Max: 2W
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  • AUIRF7303QTR
    MOSFET 2N-CH 30V 5.3A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7319Q
    MOSFET N/P-CH 30V 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
    • Power - Max: 2W
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  • AUIRF7341QTR
    MOSFET 2N-CH 55V 5.1A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7303Q
    MOSFET 2N-CH 30V 5.3A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7319QTR
    MOSFET N/P-CH 30V 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
    • Power - Max: 2W
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  • AUIRF7304QTR
    MOSFET 2P-CH 20V 4A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.3A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
    • Power - Max: 2W
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  • AUIRF7316Q
    MOSFET 2P-CH 30V 4.9A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Power - Max: 2W
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  • AUIRF7309QTR
    MOSFET N/P-CH 30V 4A/3A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
    • Power - Max: 1.4W
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  • IRF9910TRPBF-1
    MOSFET 2N-CH 20V 10A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
    • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.55V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
    • Power - Max: 2W (Ta)
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  • AUIRF7304Q
    MOSFET 2P-CH 20V 4A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.3A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
    • Power - Max: 2W
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  • AUIRF7342Q
    MOSFET 2P-CH 55V 3.4A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
    • Power - Max: 2W
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  • AUIRF7309Q
    MOSFET N/P-CH 30V 4A/3A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
    • Power - Max: 1.4W
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  • AUIRF7342QTR
    MOSFET 2P-CH 55V 3.4A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
    • Power - Max: 2W
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  • AUIRF7103QTR
    MOSFET 2N-CH 50V 3A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 50V
    • Current - Continuous Drain (Id) @ 25°C: 3A
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
    • Power - Max: 2.4W
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