• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 23
  • AUIRF7313QTR
    MOSFET 2N-CH 30V 6.9A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7313Q
    MOSFET 2N-CH 30V 6.5A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7316QTR
    MOSFET 2P-CH 30V 4.9A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Power - Max: 2W
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  • AUIRF7341Q
    MOSFET 2N-CH 55V 5.1A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
    • Power - Max: 2.4W
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  • AUIRF7379Q
    MOSFET N/P-CH 30V 5.8A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
    • Power - Max: 2.5W
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  • IRF7313TRPBF-1
    MOSFET 2N-CH 30V 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
    • Power - Max: 2W (Ta)
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  • AUIRF7343QTR
    MOSFET 55V 4.7A/3.4A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
    • Power - Max: 2W
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  • AUIRF7379QTR
    MOSFET N/P-CH 30V 5.8A/4.3A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
    • Power - Max: 2.5W
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