Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies AG-EASY1B-2
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Infineon Technologies
- Series: EasyPACK™ CoolSiC™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1.84nF @ 800V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyPACK™ CoolSiC™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 5.52nF @ 800V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyPACK™ CoolSiC™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyPACK™ CoolSiC™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7.36nF @ 800V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyPACK™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: 20mW
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyDUAL™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
- Power - Max: 20mW
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: EasyPACK™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
- Power - Max: 20mW
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100