Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies 4-FlipFet™

Found: 2
  • MOSFET P-CH 20V 5.1A FLIP-FET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-FlipFet™
    • Supplier Device Package: 4-FlipFet™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 5.1A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • MOSFET P-CH 20V 5.1A FLIPFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-FlipFet™
    • Supplier Device Package: 4-FlipFet™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 5.1A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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