-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF6100 | MOSFET P-CH 20V 5.1A FLIP-FET | Infineon Technologies | 4-FlipFet™ | Surface Mount | 4-FlipFet™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.2W (Ta) | 20V | 5.1A (Ta) | 65mOhm @ 5.1A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 21nC @ 5V | 1230pF @ 15V | ±12V | HEXFET® |
| IRF6100PBF | MOSFET P-CH 20V 5.1A FLIPFET | Infineon Technologies | 4-FlipFet™ | Surface Mount | 4-FlipFet™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.2W (Ta) | 20V | 5.1A (Ta) | 65mOhm @ 5.1A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 21nC @ 5V | 1230pF @ 15V | ±12V | HEXFET® |
- 10
- 15
- 50
- 100