Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies DIRECTFET™ M2

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • AUIRF7734M2TR
    MOSFET N-CH 40V 17A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric M2
    • Supplier Device Package: DIRECTFET™ M2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
    • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2545pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7675M2TR
    MOSFET N-CH 150V 90A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric M2
    • Supplier Device Package: DIRECTFET™ M2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
    • Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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