-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AUIRF7734M2TR | MOSFET N-CH 40V 17A DIRECTFET | Infineon Technologies | DIRECTFET™ M2 | Surface Mount | DirectFET™ Isometric M2 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.5W (Ta), 46W (Tc) | 40V | 17A (Ta) | 4.9mOhm @ 43A, 10V | 10V | 4V @ 100µA | 72nC @ 10V | 2545pF @ 25V | ±20V | HEXFET® |
AUIRF7675M2TR | MOSFET N-CH 150V 90A DIRECTFET | Infineon Technologies | DIRECTFET™ M2 | Surface Mount | DirectFET™ Isometric M2 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.7W (Ta), 45W (Tc) | 150V | 4.4A (Ta), 18A (Tc) | 56mOhm @ 11A, 10V | 10V | 5V @ 100µA | 32nC @ 10V | 1360pF @ 25V | ±20V | HEXFET® |
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