Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies DIRECTFET L6

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 7
  • AUIRF7737L2TR
    MOSFET N-CH 40V 315A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF6718L2TRPBF
    MOSFET N-CH 25V 61A DIRECTFET L6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7748L1TRPBF
    MOSFET N-CH 60V 28A DIRECTFETL6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 148A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 89A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF6718L2TR1PBF
    MOSFET N-CH 25V 61A DIRECTFET L6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7738L2TRPBF
    MOSFET N-CH 40V 35A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 184A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 109A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7471pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7737L2TRPBF
    MOSFET N-CH 40V 31A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7738L2TR
    MOSFET N-CH 40V 315A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L6
    • Supplier Device Package: DIRECTFET L6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 109A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7471pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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