-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AUIRF7737L2TR | MOSFET N-CH 40V 315A DIRECTFET | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.3W (Ta), 83W (Tc) | 40V | 31A (Ta), 156A (Tc) | 1.9mOhm @ 94A, 10V | 10V | 4V @ 150µA | 134nC @ 10V | 5469pF @ 25V | ±20V | HEXFET® |
IRF6718L2TRPBF | MOSFET N-CH 25V 61A DIRECTFET L6 | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 4.3W (Ta), 83W (Tc) | 25V | 61A (Ta), 270A (Tc) | 0.7mOhm @ 61A, 10V | 4.5V, 10V | 2.35V @ 150µA | 96nC @ 4.5V | 6500pF @ 13V | ±20V | HEXFET® |
IRF7748L1TRPBF | MOSFET N-CH 60V 28A DIRECTFETL6 | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.3W (Ta), 94W (Tc) | 60V | 28A (Ta), 148A (Tc) | 2.2mOhm @ 89A, 10V | 10V | 4V @ 250µA | 220nC @ 10V | 8075pF @ 50V | ±20V | |
IRF6718L2TR1PBF | MOSFET N-CH 25V 61A DIRECTFET L6 | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 4.3W (Ta), 83W (Tc) | 25V | 61A (Ta), 270A (Tc) | 0.7mOhm @ 61A, 10V | 4.5V, 10V | 2.35V @ 150µA | 96nC @ 4.5V | 6500pF @ 13V | ±20V | HEXFET® |
IRF7738L2TRPBF | MOSFET N-CH 40V 35A DIRECTFET | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.3W (Ta), 94W (Tc) | 40V | 35A (Ta), 184A (Tc) | 1.6mOhm @ 109A, 10V | 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | ±20V | |
IRF7737L2TRPBF | MOSFET N-CH 40V 31A DIRECTFET | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.3W (Ta), 83W (Tc) | 40V | 31A (Ta), 156A (Tc) | 1.9mOhm @ 94A, 10V | 10V | 4V @ 150µA | 134nC @ 10V | 5469pF @ 25V | ±20V | |
AUIRF7738L2TR | MOSFET N-CH 40V 315A DIRECTFET | Infineon Technologies | DIRECTFET L6 | Surface Mount | DirectFET™ Isometric L6 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.3W (Ta), 94W (Tc) | 40V | 35A (Ta), 130A (Tc) | 1.6mOhm @ 109A, 10V | 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | ±20V | HEXFET® |
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