Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Infineon Technologies DirectFET™ Isometric ME

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
  • IRF7780MTRPBF
    MOSFET N-CH 75V 89A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric ME
    • Supplier Device Package: DirectFET™ Isometric ME
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6504pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 96W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRF60DM206
    MOSFET N-CH 60V 130A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric ME
    • Supplier Device Package: DirectFET™ Isometric ME
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 96W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRF7480MTRPBF
    MOSFET N-CH 40V 217A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric ME
    • Supplier Device Package: DirectFET™ Isometric ME
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 96W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRL7486MTRPBF
    MOSFET N-CH 40V 209A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric ME
    • Supplier Device Package: DirectFET™ Isometric ME
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.25mOhm @ 123A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 111nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 6904pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7580MTRPBF
    MOSFET N-CH 60V 114A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric ME
    • Supplier Device Package: DirectFET™ Isometric ME
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 115W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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