-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7780MTRPBF | MOSFET N-CH 75V 89A | Infineon Technologies | DirectFET™ Isometric ME | Surface Mount | DirectFET™ Isometric ME | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 96W (Tc) | 75V | 89A (Tc) | 5.7mOhm @ 53A, 10V | 6V, 10V | 3.7V @ 150µA | 186nC @ 10V | 6504pF @ 25V | ±20V | StrongIRFET™ |
IRF60DM206 | MOSFET N-CH 60V 130A | Infineon Technologies | DirectFET™ Isometric ME | Surface Mount | DirectFET™ Isometric ME | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 96W (Tc) | 60V | 130A (Tc) | 2.9mOhm @ 80A, 10V | 6V, 10V | 3.7V @ 150µA | 200nC @ 10V | 6530pF @ 25V | ±20V | StrongIRFET™ |
IRF7480MTRPBF | MOSFET N-CH 40V 217A DIRECTFET | Infineon Technologies | DirectFET™ Isometric ME | Surface Mount | DirectFET™ Isometric ME | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 96W (Tc) | 40V | 217A (Tc) | 1.2mOhm @ 132A, 10V | 6V, 10V | 3.9V @ 150µA | 185nC @ 10V | 6680pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
IRL7486MTRPBF | MOSFET N-CH 40V 209A | Infineon Technologies | DirectFET™ Isometric ME | Surface Mount | DirectFET™ Isometric ME | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 40V | 209A (Tc) | 1.25mOhm @ 123A, 10V | 4.5V, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
IRF7580MTRPBF | MOSFET N-CH 60V 114A DIRECTFET | Infineon Technologies | DirectFET™ Isometric ME | Surface Mount | DirectFET™ Isometric ME | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 115W (Tc) | 60V | 114A (Tc) | 3.6mOhm @ 70A, 10V | 6V, 10V | 3.7V @ 150µA | 180nC @ 10V | 6510pF @ 25V | ±20V | StrongIRFET™ |
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