Found: 5
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IRF7780MTRPBF MOSFET N-CH 75V 89A Infineon Technologies DirectFET™ Isometric ME Surface Mount DirectFET™ Isometric ME MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 96W (Tc) 75V 89A (Tc) 5.7mOhm @ 53A, 10V 6V, 10V 3.7V @ 150µA 186nC @ 10V 6504pF @ 25V ±20V StrongIRFET™
IRF60DM206 MOSFET N-CH 60V 130A Infineon Technologies DirectFET™ Isometric ME Surface Mount DirectFET™ Isometric ME MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 96W (Tc) 60V 130A (Tc) 2.9mOhm @ 80A, 10V 6V, 10V 3.7V @ 150µA 200nC @ 10V 6530pF @ 25V ±20V StrongIRFET™
IRF7480MTRPBF MOSFET N-CH 40V 217A DIRECTFET Infineon Technologies DirectFET™ Isometric ME Surface Mount DirectFET™ Isometric ME MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 96W (Tc) 40V 217A (Tc) 1.2mOhm @ 132A, 10V 6V, 10V 3.9V @ 150µA 185nC @ 10V 6680pF @ 25V ±20V HEXFET®, StrongIRFET™
IRL7486MTRPBF MOSFET N-CH 40V 209A Infineon Technologies DirectFET™ Isometric ME Surface Mount DirectFET™ Isometric ME MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 104W (Tc) 40V 209A (Tc) 1.25mOhm @ 123A, 10V 4.5V, 10V 2.5V @ 150µA 111nC @ 4.5V 6904pF @ 25V ±20V HEXFET®, StrongIRFET™
IRF7580MTRPBF MOSFET N-CH 60V 114A DIRECTFET Infineon Technologies DirectFET™ Isometric ME Surface Mount DirectFET™ Isometric ME MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 115W (Tc) 60V 114A (Tc) 3.6mOhm @ 70A, 10V 6V, 10V 3.7V @ 150µA 180nC @ 10V 6510pF @ 25V ±20V StrongIRFET™