- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLF7G27LS-150P,112 | RF FET LDMOS 65V 16DB SOT539B | Ampleon USA Inc. | SOT539B | 30W | 2.5GHz ~ 2.7GHz | 65V | 37A | SOT-539B | LDMOS (Dual), Common Source | 16.5dB | 28V | 1.2A | |||||||||||||||||
| MRF21030LR5 | FET RF 65V 2.14GHZ NI-400 | Freescale Semiconductor | NI-400 | 30W | 2.14GHz | 65V | NI-400 | LDMOS | 13dB | 28V | 250mA | ||||||||||||||||||
| IPB80N08S406ATMA1 | MOSFET N-CH 75V 80A TO263-3 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 80V | 80A (Tc) | 5.5mOhm @ 80A, 10V | 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ | |||||||||||
| IPP60R099C6XKSA1 | MOSFET N-CH 600V 37.9A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 278W (Tc) | 600V | 37.9A (Tc) | 99mOhm @ 18.1A, 10V | 10V | 3.5V @ 1.21mA | 119nC @ 10V | 2660pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| BSS84PL6433HTMA1 | MOSFET P-CH 60V 170MA SOT-23 | Infineon Technologies | SOT-23-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 360mW (Ta) | 60V | 170mA (Ta) | 8Ohm @ 170mA, 10V | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IRF3415S | MOSFET N-CH 150V 43A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 150V | 43A (Tc) | 42mOhm @ 22A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | HEXFET® | |||||||||||
| JANTXV2N6804 | MOSFET P-CH 100V 11A | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 4W (Ta), 75W (Tc) | 100V | 11A (Tc) | 360mOhm @ 11A, 10V | 10V | 4V @ 250µA | 29nC @ 10V | ±20V | Military, MIL-PRF-19500/562 | ||||||||||||
| BUK9Y3R5-40E,115 | MOSFET N-CH 40V LFPAK | Nexperia USA Inc. | LFPAK56, Power-SO8 | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 40V | 100A (Tc) | 3.6mOhm @ 25A, 10V | 5V | 2.1V @ 1mA | 30.2nC @ 5V | 5137pF @ 25V | ±10V | Automotive, AEC-Q101, TrenchMOS™ | |||||||||||
| FQD4N25TF | MOSFET N-CH 250V 3A DPAK | onsemi | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 37W (Tc) | 250V | 3A (Tc) | 1.75Ohm @ 1.5A, 10V | 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | ±30V | QFET® | |||||||||||
| NTD18N06L-1G | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | I-PAK | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.1W (Ta), 55W (Tj) | 60V | 18A (Ta) | 65mOhm @ 9A, 5V | 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | ±15V | ||||||||||||
| IRFS30067PPBF | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | |||||||||||||||||||||||||||
| SPI07N65C3IN | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | |||||||||||||||||||||||||||
| STD35NF06T4 | MOSFET N-CH 60V 35A DPAK | STMicroelectronics | DPAK | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 80W (Tc) | 60V | 35A (Tc) | 20mOhm @ 17.5A, 10V | 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | ±20V | STripFET™ II | |||||||||||
| SUD50P10-43L-E3 | MOSFET P-CH 100V 37.1A TO252 | Vishay Siliconix | TO-252, (D-Pak) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 8.3W (Ta), 136W (Tc) | 100V | 37.1A (Tc) | 43mOhm @ 9.2A, 10V | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | ±20V | TrenchFET® | |||||||||||
| SIRA62DP-T1-RE3 | MOSFET N-CHAN 30V | Vishay Siliconix | PowerPAK® SO-8 | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 65.7W (Tc) | 30V | 51.4A (Ta), 80A (Tc) | 1.2mOhm @ 15A, 10V | 4.5V, 10V | 2.2V @ 250µA | 93nC @ 10V | 4460pF @ 15V | +16V, -12V | TrenchFET® Gen IV |
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