Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single International Rectifier
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 9.7A (Ta)
- Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, 9.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 900pF @ 15V
- Power - Max: 1.4W (Ta), 2W (Ta)
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- Manufacturer: International Rectifier
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 2W
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- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 32-PowerVFQFN
- Supplier Device Package: 32-PQFN (6x6)
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
- Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
- Power - Max: 156W (Tc)
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- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: Dual PQFN (5x4)
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
- Power - Max: 25W, 28W
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-
- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2.5W
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 2W (Ta)
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
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- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
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- Manufacturer: International Rectifier
Info from the market- Total warehouses:
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- Offers in stock:
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