Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single General Electric

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • GE12047BCA3
    1200V 475A SIC DUAL MODULE
    General Electric
    • Manufacturer: General Electric
    • Series: SiC Power
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (Tc)
    • Package / Case: Module
    • FET Type: 2 Independent
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 475A
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
    • Vgs(th) (Max) @ Id: 4.5V @ 160mA
    • Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
    • Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
    • Power - Max: 1250W
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  • GE17042BCA3
    1700V 425A SIC DUAL MODULE
    General Electric
    • Manufacturer: General Electric
    • Mounting Type: Chassis Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: Module
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1700V (1.7kV)
    • Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
    • Vgs(th) (Max) @ Id: 4.5V @ 160mA
    • Gate Charge (Qg) (Max) @ Vgs: 18V
    • Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
    • Power - Max: 1250W
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  • GE17042CCA3
    1700V 425A SIC HALF-BRIDGE MODUL
    General Electric
    • Manufacturer: General Electric
    • Mounting Type: Chassis Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1700V (1.7kV)
    • Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
    • Vgs(th) (Max) @ Id: 4.5V @ 160mA
    • Gate Charge (Qg) (Max) @ Vgs: 18V
    • Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
    • Power - Max: 1250W
    Info from the market
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    • Offers in stock:
  • GE12047CCA3
    1200V 475A SIC HALF-BRIDGE MODUL
    General Electric
    • Manufacturer: General Electric
    • Series: SiC Power
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (Tc)
    • Package / Case: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 475A
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
    • Vgs(th) (Max) @ Id: 4.5V @ 160mA
    • Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
    • Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
    • Power - Max: 1250W
    Info from the market
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    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
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  • 50
  • 100