• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
GE12047BCA3 1200V 475A SIC DUAL MODULE General Electric 1250W Chassis Mount Module -55°C ~ 150°C (Tc) 2 Independent 1200V (1.2kV) 475A Silicon Carbide (SiC) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29.3nF @ 600V SiC Power
GE17042BCA3 1700V 425A SIC DUAL MODULE General Electric 1250W Chassis Mount Module 175°C (TJ) 2 N-Channel (Dual) 1700V (1.7kV) 425A (Tc) Silicon Carbide (SiC) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V
GE17042CCA3 1700V 425A SIC HALF-BRIDGE MODUL General Electric 1250W Chassis Mount Module 175°C (TJ) 2 N-Channel (Half Bridge) 1700V (1.7kV) 425A (Tc) Silicon Carbide (SiC) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V
GE12047CCA3 1200V 475A SIC HALF-BRIDGE MODUL General Electric 1250W Chassis Mount Module -55°C ~ 150°C (Tc) 2 N-Channel (Half Bridge) 1200V (1.2kV) 475A Silicon Carbide (SiC) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29.3nF @ 600V SiC Power
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