Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Central Semiconductor Corp

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 131
  • CMPDM202PH BK
    MOSFET P-CH 20V SOT-23F
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-3 Flat Leads
    • Supplier Device Package: SOT-23F
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 88mOhm @ 1.2A, 5V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
    • Vgs (Max): 12V
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  • CMPDM303NH BK
    MOSFET N-CH 30V SOT-23F
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-3 Flat Leads
    • Supplier Device Package: SOT-23F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): 12V
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  • CWDM305N TR13 PBFREE
    MOSFET N-CH 30V 5.8A 8SOIC
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): -20V
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  • CTLDM303N-M832DS BK
    MOSFET DUAL N-CHANNEL
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TDFN Exposed Pad
    • Supplier Device Package: TLM832DS
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
    • Vgs(th) (Max) @ Id: 1.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
    • Power - Max: 1.65W
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  • CXDM4060P TR PBFREE
    MOSFET P-CH 40V 6A SOT-89
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): 25V
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  • CP373-CTLDM303N-WN
    MOSFET TRANSISTOR N-CH CHIP
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): 12V
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  • CTLDM303N-M832DS TR
    MOSFET 2N-CH 30V 3.6A TLM832DS
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TDFN Exposed Pad
    • Supplier Device Package: TLM832DS
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
    • Power - Max: 1.65W
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  • CDM2208-800FP SL PBFREE
    MOSFET N-CH 8A 800V TO-220FP
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220FP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 24.45nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 57W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): 30V
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  • CTLDM7120-M621H TR
    MOSFET N-CH 20V 1A
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: 6-XFDFN Exposed Pad
    • Supplier Device Package: TLM621H
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
    • Vgs (Max): -8V
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  • CMLDM8005 TR PBFREE
    MOSFET 2P-CH 20V 0.65A SOT563
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: SOT-563
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 650mA
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
    • Power - Max: 350mW
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  • 2N5485
    RF MOSFET N-CH JFET 15V TO-92
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Voltage - Rated: 25V
    • Current - Test: 4mA
    • Transistor Type: N-Channel JFET
    • Gain: 20dB
    • Voltage - Test: 15V
    • Noise Figure: 2.5dB
    • Current Rating (Amps): 10mA
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  • CTLDM7120-M832DS TR
    MOSFET 2N-CH 20V 1A
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: 8-TDFN Exposed Pad
    • Supplier Device Package: TLM832DS
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
    • Power - Max: 1.65W
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  • BF244C
    SCR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
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  • BF244A
    SCR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
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  • BF244B
    SCR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
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