Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology

• Manufacturer: Microchip Technology
• Package / Case: T2
• Supplier Device Package: T2
• Frequency: 80MHz
• Voltage - Rated: 170V
• Current - Test: 800mA
• Power - Output: 600W
• Transistor Type: N-Channel
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating (Amps): 4mA

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3Pak
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 166A
• Technology: SiCFET (Silicon Carbide)

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
• Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-PDFN (5x6)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.2W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): +10V, -8V

• Manufacturer: Microchip Technology
• Series: CoolMOS™
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 46A
• Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
• Power - Max: 357W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 6V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 84mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 270mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs (Max): -6V

• Manufacturer: Microchip Technology
• Series: POWER MOS 7®
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Power - Max: 694W

• Manufacturer: Microchip Technology
• Package / Case: T-1
• Supplier Device Package: T-1
• Frequency: 40.7MHz
• Voltage - Rated: 1000V
• Power - Output: 750W
• Transistor Type: N-Channel
• Gain: 15dB
• Voltage - Test: 400V
• Current Rating (Amps): 8A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP3
• Supplier Device Package: SP3
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
• Power - Max: 277W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
• Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 10mA
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Series: SymFET™
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 6V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 568mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs (Max): -6V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP6C
• FET Type: 4 N-Channel (Three Level Inverter)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
• Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
• Power - Max: 1378W (Tc)

• Manufacturer: Microchip Technology
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264
• Frequency: 40.68MHz
• Voltage - Rated: 1000V
• Power - Output: 300W
• Transistor Type: N-Channel
• Gain: 16dB
• Voltage - Test: 150V
• Current Rating (Amps): 13A

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-PDFN (3x3)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.8W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): +10V, -8V